 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| IPB80N04S3-03 IPI80N04S3-03, IPP80N04S3-03 OptiMOS(R)-T Power-Transistor Product Summary V DS R DS(on),max (SMD version) ID 40 3.2 80 V m A Features * N-channel - Enhancement mode * Automotive AEC Q101 qualified * MSL1 up to 260C peak reflow * 175C operating temperature * Green package (RoHS compliant) * Ultra low Rds(on) * 100% Avalanche tested PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB80N04S3-03 IPI80N04S3-03 IPP80N04S3-03 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 3N0403 3N0403 3N0403 Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Conditions T C=25 C, V GS=10 V T C=100 C, V GS=10 V2) Pulsed drain current2) Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS V GS P tot T j, T stg T C=25 C T C=25 C I D=80 A Value 80 80 320 526 20 188 -55 ... +175 55/175/56 mJ V W C Unit A Rev. 1.0 page 1 2007-05-03 IPB80N04S3-03 IPI80N04S3-03, IPP80N04S3-03 Parameter Symbol Conditions min. Thermal characteristics2) Thermal resistance, junction - case Thermal resistance, junction ambient, leaded SMD version, device on PCB R thJC R thJA R thJA minimal footprint 6 cm2 cooling area3) Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D= 1 mA V GS(th) I DSS V DS=V GS, I D=120 A V DS=40 V, V GS=0 V, T j=25 C V DS=40 V, V GS=0 V, T j=125 C2) Gate-source leakage current Drain-source on-state resistance I GSS RDS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=80 A V GS=10 V, I D=80 A, SMD version 40 2.1 3.0 4.0 1 A V 0.8 62 62 40 K/W Values typ. max. Unit - 2.8 100 100 3.5 nA m - 2.5 3.2 Rev. 1.0 page 2 2007-05-03 IPB80N04S3-03 IPI80N04S3-03, IPP80N04S3-03 Parameter Symbol Conditions min. Dynamic characteristics2) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics2) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward current2) Diode pulse current2) Diode forward voltage IS I S,pulse V SD T C=25 C V GS=0 V, I F=80 A, T j=25 C V R=20 V, I F=I S, di F/dt =100 A/s 1 80 320 1.3 V A Q gs Q gd Qg V plateau V DD=32 V, I D=80 A, V GS=0 to 10 V 30 20 83 5.4 40 35 110 V nC C iss C oss Crss t d(on) tr t d(off) tf V DD=20 V, V GS=10 V, I D=80 A, R G=3.5 V GS=0 V, V DS=25 V, f =1 MHz 5600 1540 240 25 17 39 14 7300 2000 350 ns pF Values typ. max. Unit Reverse recovery time2) t rr - 46 - ns Reverse recovery charge2) 1) Q rr - 73 - nC Current is limited by bondwire; with an R thJC = 0.8K/W the chip is able to carry 182A at 25C. For detailed information see Application Note ANPS071E at www.infineon.com/optimos 2) 3) Defined by design. Not subject to production test. Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2007-05-03 IPB80N04S3-03 IPI80N04S3-03, IPP80N04S3-03 1 Power dissipation P tot = f(T C); V GS 6 V 2 Drain current I D = f(T C); V GS 6 V 200 180 160 140 120 100 80 60 P tot [W] 100 80 60 40 20 0 0 50 100 150 200 I D [A] 40 20 0 0 50 100 150 200 T C [C] T C [C] 3 Safe operating area I D = f(V DS); T C = 25 C; D = 0; SMD parameter: t p 1000 1 s 10 s 100 s 4 Max. transient thermal impedance Z thJC = f(t p) parameter: D =t p/T 101 100 0.5 100 Z thJC [K/W] 1 ms I D [A] 10-1 0.1 0.05 10 10-2 0.01 single pulse 1 0.1 1 10 100 10-3 10-6 10-5 10-4 10-3 10-2 10-1 100 V DS [V] t p [s] Rev. 1.0 page 4 2007-05-03 IPB80N04S3-03 IPI80N04S3-03, IPP80N04S3-03 5 Typ. output characteristics I D = f(V DS); T j = 25 C; SMD parameter: V GS 320 10 V 7V 6 Typ. drain-source on-state resistance R DS(on) = f(I D); T j = 25 C; SMD parameter: V GS 20 5V 5.5 V 6V 6.5 V 280 240 200 18 16 6.5 V 14 R DS(on) [m] I D [A] 12 10 8 160 120 6V 7V 5.5 V 80 40 0 0 2 4 6 8 5V 6 4 2 0 80 160 240 10 V 320 V DS [V] I D [A] 7 Typ. transfer characteristics I D = f(V GS); V DS = 6V parameter: T j 320 -55 C 8 Typ. drain-source on-state resistance R DS(on) = f(T j); I D = 80 A; V GS = 10 V; SMD 5 280 240 200 25 C 4 175 C 160 120 80 40 0 2 3 4 5 6 7 8 R DS(on) [m] I D [A] 3 2 1 -60 -20 20 60 100 140 180 V GS [V] T j [C] Rev. 1.0 page 5 2007-05-03 IPB80N04S3-03 IPI80N04S3-03, IPP80N04S3-03 9 Typ. gate threshold voltage V GS(th) = f(T j); V GS = V DS parameter: I D 4 104 10 Typ. capacitances C = f(V DS); V GS = 0 V; f = 1 MHz Ciss 3.5 3 C [pF] 1200 A V GS(th) [V] Coss 120 A 2.5 103 2 1.5 Crss 1 -60 -20 20 60 100 140 180 102 0 5 10 15 20 25 30 T j [C] V DS [V] 11 Typical forward diode characteristicis IF = f(VSD) parameter: T j 103 12 Typ. avalanche characteristics I A S= f(t AV) parameter: T j(start) 100 100 C 25 C 150 C 102 I AV [A] 101 175 C 25 C I F [A] 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1 1 10 100 1000 V SD [V] t AV [s] Rev. 1.0 page 6 2007-05-03 IPB80N04S3-03 IPI80N04S3-03, IPP80N04S3-03 13 Typical avalanche energy E AS = f(T j) parameter: I D 2500 55 14 Typ. drain-source breakdown voltage V BR(DSS) = f(T j); I D = 1 mA 2000 20 A 50 V BR(DSS) [V] 40 A 80 A 1500 45 E AS [mJ] 1000 40 500 35 0 25 75 125 175 30 -60 -20 20 60 100 140 180 T j [C] T j [C] 15 Typ. gate charge V GS = f(Q gate); I D = 80 A pulsed parameter: V DD 12 16 Gate charge waveforms V GS 8V 32 V 10 Qg 8 V GS [V] 6 V g s(th) 4 2 Q g (th) Q gs 0 20 40 60 80 100 Q sw Q gd Q gate 0 Q gate [nC] Rev. 1.0 page 7 2007-05-03 IPB80N04S3-03 IPI80N04S3-03, IPP80N04S3-03 Published by Infineon Technologies AG 81726 Munich, Germany (c) Infineon Technologies AG 2007 All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2007-05-03 IPB80N04S3-03 IPI80N04S3-03, IPP80N04S3-03 Revision History Version Date Changes Rev. 1.0 page 9 2007-05-03 |
Price & Availability of IPB80N04S3-03
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |